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TriQuint's New GaN RF Power Transistor

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The TriQuint T1G6000528-Q3 is constructed with TriQuint's proven 0.25 μm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. For more information, visit TriQuint Semiconductor.

Hosted by: Paul Whytock Videography by: Paul Milnamow Edited by: Curtis Ellzey


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